Characterization of Laser Annealed Se-Implanted GaAs

A Q-switched ruby or Nd: Glass laser has been used to anneal Se-implanted GaAs. Differential Hall-effect and sheet-resistivity measurements have been carried out to investigate the electrical properties of the implanted layers as a function of laser energy density and laser wavelength. Electron concentrations greater than 1x1019/cm3 were obtained but mobility values were low. Significant indifussion of Se atoms was observed following laser irradiation. The depth of electrically active layer greatly depends on the laser energy density. A comparison of the measured annealed depth as a function of laser energy density with the theoretically calculated annealed depth is presented.